Solid state imaging device, manufacturing method of the same, and electronic equipment

ABSTRACT

A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a national stage application under 35 U.S.C. 371 andclaims the benefit of PCT Application No. PCT/JP2014/006045 having aninternational filing date of Dec. 3, 2014, which designated the UnitedStates, which PCT application claimed the benefit of Japanese PatentApplication No. 2013-257294 filed Dec. 12, 2013, and Japanese PatentApplication No. 2014-109412 filed May 27, 2014, the disclosures of whichare incorporated herein by reference in their entirety.

TECHNICAL FIELD

The present disclosure relates to a solid state imaging device, amanufacturing method of the same, and electronic equipment. Inparticular, the present disclosure relates to a solid state imagingdevice, a manufacturing method of the same, and electronic equipmentwhich enable the suppression of color mixing and the suppression ofsensitivity reduction in pixels for phase difference detection.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Japanese Priority PatentApplication JP 2013-257294 filed Dec. 12, 2013, and Japanese PriorityPatent Application JP 2014-109412 filed May 27, 2014, the entirecontents of each of which are incorporated herein by reference.

BACKGROUND ART

In recent years, there has been wide adoption of imaging apparatusessuch as digital still cameras and digital video cameras which image anobject such as a person or an animal using a solid state imaging device,which is a Complementary Metal-Oxide Semiconductor (CMOS) sensor or thelike, and which record image data which is obtained as a result.

In the imaging apparatus, there is a technology which can realize phasedifference detection type autofocus (AF, also referred to herein as“automatic focus”) without using a dedicated automatic focus detectionsensor by adding a phase difference detection function to a solid stateimaging device in the related art (for example, refer to PTL 1 and PTL2). The solid state imaging device which has the phase differencedetection function is configured to include pixels for phase differencedetection and pixels for imaging, and a portion of the pixels for phasedifference detection form an optical black region.

Meanwhile, with an increase in definition of the solid state imagingdevices, there is demand for rendering an arrangement interval betweencolor filters (which are provided corresponding to photoelectricconversion regions of pixels) as narrow as possible in order to preventa reduction in sensitivity.

However, there is a case in which, when the arrangement interval betweenthe color filters is narrow, color mixing and color shading (colorunevenness) occur due to process variation caused by shifts that occurduring the matching of the lithography process of the color filters.

Therefore, in relation to the pixels for imaging (for image generation),a method has been conceived in which the color mixing and the colorshading due to process variations of the color filters are prevented byproviding optically transparent regions between color filters ofdifferent colors (for example, refer to PTL 3).

CITATION LIST Patent Literature

PTL 1: Japanese Unexamined Patent Application Publication No.2000-156823

PTL 2: Japanese Unexamined Patent Application Publication No.2009-244862

PTL 3: Japanese Unexamined Patent Application Publication No.2007-147738

SUMMARY OF INVENTION Technical Problem

However, consideration had not been given to a method of suppressing thecolor mixing and the sensitivity reduction in the pixels for phasedifference detection in the solid state imaging device which has thephase difference detection function.

The present disclosure was made in consideration of these circumstances,and embodiments herein are capable of suppressing the color mixing andthe sensitivity reduction in the pixels for phase difference detection.

Solution to Problem

According to a first illustrative embodiment of the present disclosure,there is provided a solid state imaging device which includes a phasedifference detection pixel which is a pixel for phase differencedetection; a first imaging pixel which is a pixel for imaging and isadjacent to the phase difference detection pixel; and a second imagingpixel which is a pixel for imaging other than the first imaging pixel,and an area of a color filter of the first imaging pixel is smaller thanan area of a color filter of the second imaging pixel. In variousillustrative embodiments, the first color filter is aligned with thefirst imaging pixel and the second color filter is aligned with thesecond imaging pixel.

In the first illustrative embodiment of the present disclosure, thesolid state imaging device is configured to include a phase differencedetection pixel which is a pixel for phase difference detection; a firstimaging pixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a colorfilter of the first imaging pixel is smaller than an area of a colorfilter of the second imaging pixel.

According to a second illustrative embodiment of the present disclosure,there is provided a manufacturing method of a solid state imaging deviceincluding forming a solid state imaging device which includes a phasedifference detection pixel which is a pixel for phase differencedetection; a first imaging pixel which is a pixel for imaging and isadjacent to the phase difference detection pixel; and a second imagingpixel which is a pixel for imaging other than the first imaging pixel.An area of a color filter of the first imaging pixel is smaller than anarea of a color filter of the second imaging pixel.

In the second illustrative embodiment of the present disclosure, a solidstate imaging device is formed, which is configured to include a phasedifference detection pixel which is a pixel for phase differencedetection; a first imaging pixel which is a pixel for imaging and isadjacent to the phase difference detection pixel; and a second imagingpixel which is a pixel for imaging other than the first imaging pixel.An area of a color filter of the first imaging pixel is smaller than anarea of a color filter of the second imaging pixel.

According to a third illustrative embodiment of the present disclosure,there is provided electronic equipment which includes a phase differencedetection pixel which is a pixel for phase difference detection; a firstimaging pixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a colorfilter of the first imaging pixel is smaller than an area of a colorfilter of the second imaging pixel.

In the third illustrative embodiment of the present disclosure, theelectronic equipment is configured to include a phase differencedetection pixel which is a pixel for phase difference detection; a firstimaging pixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a colorfilter of the first imaging pixel is smaller than an area of a colorfilter of the second imaging pixel.

According to a fourth illustrative embodiment of the present disclosure,there is provided a solid state imaging device which includes a phasedifference detection pixel which is a pixel for phase differencedetection; a first imaging pixel which is a pixel for imaging and isadjacent to the phase difference detection pixel; and a second imagingpixel which is a pixel for imaging other than the first imaging pixel.An area of a light shielding film of the first imaging pixel is greaterthan an area of a light shielding film of the second imaging pixel.

In the fourth illustrative embodiment of the present disclosure, thesolid state imaging device is configured to include a phase differencedetection pixel which is a pixel for phase difference detection; a firstimaging pixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a lightshielding film of the first imaging pixel is greater than an area of alight shielding film of the second imaging pixel.

According to a fifth illustrative embodiment of the present disclosure,there is provided a manufacturing method of a solid state imaging deviceincluding forming a solid state imaging device which includes a phasedifference detection pixel which is a pixel for phase differencedetection; a first imaging pixel which is a pixel for imaging and isadjacent to the phase difference detection pixel; and a second imagingpixel which is a pixel for imaging other than the first imaging pixel.An area of a light shielding film of the first imaging pixel is greaterthan an area of a light shielding film of the second imaging pixel.

In the fifth illustrative embodiment of the present disclosure, there isprovided a solid state imaging device which includes a phase differencedetection pixel which is a pixel for phase difference detection; a firstimaging pixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a lightshielding film of the first imaging pixel is greater than an area of alight shielding film of the second imaging pixel.

According to a sixth illustrative embodiment of the present disclosure,there is provided electronic equipment which includes a phase differencedetection pixel which is a pixel for phase difference detection; a firstimaging pixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a lightshielding film of the first imaging pixel is greater than an area of alight shielding film of the second imaging pixel.

In the sixth illustrative embodiment of the present disclosure, theelectronic equipment is configured to include a phase differencedetection pixel which is a pixel for phase difference detection; a firstimaging pixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a lightshielding film of the first imaging pixel is greater than an area of alight shielding film of the second imaging pixel.

Advantageous Effects of Invention

According to the present disclosure, it is possible to detect a phasedifference. According to the present disclosure, it is possible tosuppress the color mixing and the sensitivity reduction in the pixelsfor phase difference detection. Further, according to the presentdisclosure, it is possible to suppress the color mixing in pixels whichare adjacent to the pixels for phase difference detection.

Note that, the present disclosure is not necessarily limited to theeffects described here, and any of the effects described in the presentdisclosure may be acceptable.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram showing an illustrative configuration exampleof an embodiment of a solid state imaging device to which the presenttechnology is applied.

FIG. 2 is a diagram showing an equivalent circuit of an illustrativefirst configuration example of a pixel.

FIG. 3A is a diagram showing an illustrative first structure example ofa pixel array unit.

FIG. 3B is an illustrative diagram showing the first structure exampleof the pixel array unit.

FIG. 4A is an illustrative diagram showing the first structure exampleof the pixel array unit when process variation occurs.

FIG. 4B is an illustrative diagram showing the first structure exampleof the pixel array unit when process variation occurs.

FIG. 5A is an illustrative schematic top surface diagram showing anexample of the shape of a light shielding film in the pixel array unitof FIGS. 3A and 3B.

FIG. 5B is an illustrative schematic top surface diagram showing anexample of the shape of the light shielding film in the pixel array unitof FIGS. 3A and 3B.

FIG. 6A is an illustrative diagram for illustrating the manufacturingmethod of the pixel array unit of FIGS. 3A and 3B.

FIG. 6B is an illustrative diagram for illustrating the manufacturingmethod of the pixel array unit of FIGS. 3A and 3B.

FIG. 6C is an illustrative diagram for illustrating the manufacturingmethod of the pixel array unit of FIGS. 3A and 3B.

FIG. 6D is an illustrative diagram for illustrating the manufacturingmethod of the pixel array unit of FIGS. 3A and 3B.

FIG. 6E is an illustrative diagram for illustrating the manufacturingmethod of the pixel array unit of FIGS. 3A and 3B.

FIG. 6F is an illustrative diagram for illustrating the manufacturingmethod of the pixel array unit of FIGS. 3A and 3B.

FIG. 7A is a diagram showing an illustrative second structure example ofa pixel array unit.

FIG. 7B is an illustrative diagram showing the second structure exampleof the pixel array unit.

FIG. 8 is a schematic top surface diagram showing an illustrative thirdstructure example of a pixel array unit.

FIG. 9 is a diagram showing another illustrative example of thearrangement of an opening region.

FIG. 10A is a schematic top surface diagram showing an illustrativefourth structure example of a pixel array unit.

FIG. 10B is an illustrative schematic diagram showing the fourthstructure example of the pixel array unit.

FIG. 11A is a diagram showing an illustrative fifth structure example ofa pixel array unit.

FIG. 11B is an illustrative diagram showing the fifth structure exampleof the pixel array unit.

FIG. 12A is an illustrative diagram showing another example of the fifthstructure example of a pixel array unit.

FIG. 12B is an illustrative diagram showing another example of the fifthstructure example of the pixel array unit.

FIG. 13A is a diagram showing an illustrative sixth structure example ofa pixel array unit.

FIG. 13B is an illustrative diagram showing the sixth structure exampleof the pixel array unit.

FIG. 14A is an illustrative diagram showing another example of the sixthstructure example of a pixel array unit.

FIG. 14B is an illustrative diagram showing another example of the sixthstructure example of a pixel array unit.

FIG. 15A is an illustrative diagram showing the first structure exampleof the pixel array unit when a 2×2 pixel array is used.

FIG. 15B is an illustrative diagram showing the first structure exampleof the pixel array unit when the 2×2 pixel array is used.

FIG. 16A is an illustrative diagram showing the second structure exampleof the pixel array unit when a 2×2 pixel array is used.

FIG. 16B is an illustrative diagram showing the second structure exampleof the pixel array unit when a 2×2 pixel array is used.

FIG. 17A is an illustrative diagram showing the third structure exampleof the pixel array unit when a 2×2 pixel array is used.

FIG. 17B is an illustrative diagram showing the third structure exampleof the pixel array unit when the 2×2 pixel array is used.

FIG. 18A is an illustrative diagram showing the fourth structure exampleof the pixel array unit when a 2×2 pixel array is used.

FIG. 18B is an illustrative diagram showing the fourth structure exampleof the pixel array unit when the 2×2 pixel array is used.

FIG. 19A is an illustrative diagram showing an example of electricalwiring between the pixels when a 2×2 pixel array is used.

FIG. 19B is an illustrative diagram showing an example of electricalwiring between the pixels when the 2×2 pixel array is used.

FIG. 19C is an illustrative diagram showing an example of electricalwiring between the pixels when the 2×2 pixel array is used.

FIG. 19D is an illustrative diagram showing an example of electricalwiring between the pixels when the 2×2 pixel array is used.

FIG. 19E is an illustrative diagram showing an example of electricalwiring between the pixels when the 2×2 pixel array is used.

FIG. 20A is an illustrative diagram showing another example of the firststructure of the pixel array unit when a 2×2 pixel array is used.

FIG. 20B is an illustrative diagram showing another example of the firststructure of the pixel array unit when a 2×2 pixel array is used.

FIG. 21A is an illustrative diagram showing another example of thesecond structure of the pixel array unit when a 2×2 pixel array is used.

FIG. 21B is an illustrative diagram showing another example of thesecond structure of the pixel array unit when a 2×2 pixel array is used.

FIG. 22A is an illustrative diagram showing another example of the thirdstructure of the pixel array unit when a 2×2 pixel array is used.

FIG. 22B is an illustrative diagram showing another example of the thirdstructure of the pixel array unit when a 2×2 pixel array is used.

FIG. 23A is an illustrative diagram showing another example of thefourth structure of the pixel array unit when a 2×2 pixel array is used.

FIG. 23B is an illustrative diagram showing another example of thefourth structure of the pixel array unit when a 2×2 pixel array is used.

FIG. 24A is an illustrative diagram showing the fifth structure exampleof the pixel array unit when a 2×2 pixel array is used.

FIG. 24B is an illustrative diagram showing the fifth structure exampleof the pixel array unit when a 2×2 pixel array is used.

FIG. 25A is an illustrative diagram showing another example of the fifthstructure of the pixel array unit when a 2×2 pixel array is used.

FIG. 25B is an illustrative diagram showing another example of the fifthstructure of the pixel array unit when a 2×2 pixel array is used.

FIG. 26A is an illustrative diagram showing the eighth structure exampleof a pixel array unit.

FIG. 26B is an illustrative diagram showing the eighth structure exampleof a pixel array unit.

FIG. 27 is an illustrative diagram showing a ninth structure example ofa pixel array unit.

FIG. 28 shows an equivalent circuit of an illustrative secondconfiguration of the pixels.

FIG. 29A is a diagram showing an illustrative arrangement example of thecomponents of the solid state imaging device.

FIG. 29B is a diagram showing an illustrative arrangement example of thecomponents of the solid state imaging device.

FIG. 29C is a diagram showing an illustrative arrangement example of thecomponents of the solid state imaging device.

FIG. 30 is a diagram that shows a configuration example of anillustrative imaging apparatus as the electronic equipment to which thepresent disclosure is applied.

DESCRIPTION OF EMBODIMENTS First Illustrative Embodiment

(Configuration Example of an Illustrative Embodiment of Solid StateImaging Device)

FIG. 1 is a block diagram showing an illustrative configuration exampleof an embodiment of a solid state imaging device to which the presenttechnology is applied.

A solid state imaging device 41 of FIG. 1 is configured to include, on asemiconductor substrate which is not shown, a timing control unit 42, avertical scanning circuit 43, a pixel array unit 44, a constant currentsource circuit unit 45, a reference signal generation unit 46, a columnAD conversion unit 47, a horizontal scanning circuit 48, a horizontaloutput line 49, and an output circuit 50.

The timing control unit 42 supplies a clock signal or a timing signal,which is necessary for predetermined operations, to the verticalscanning circuit 43 and the horizontal scanning circuit 48 on the basisof a master clock of a predetermined frequency. For example, the timingcontrol unit 42 supplies a timing signal of a shutter operation or aread operation of pixels 51 to the vertical scanning circuit 43 and thehorizontal scanning circuit 48. While omitted from the drawings, thetiming control unit 42 also supplies the clock signal or the timingsignal, which is necessary for predetermined operations, to thereference signal generation unit 46 and the column AD conversion unit47.

The vertical scanning circuit 43 supplies a signal which controls theoutput of the pixel signal to each of the pixels 51 which are lined upin a vertical direction of the pixel array unit 44, in order at apredetermined timing.

The plurality of pixels 51 is arranged in a two-dimensional arraypattern (a matrix pattern) in the pixel array unit 44.

The plurality of pixels 51 which are arranged in a two-dimensional arraypattern are connected to the vertical scanning circuit 43 by horizontalsignal lines 52 in row units. In other words, the plurality of pixels 51which are arranged in the same row within the pixel array unit 44 areconnected to the vertical scanning circuit 43 by the same singlehorizontal signal line 52. Note that, in FIG. 1, the horizontal signallines 52 are shown as single wiring; however, they are not limited tosingle wiring.

The plurality of pixels 51 which are arranged in a two-dimensional arraypattern are connected to the horizontal scanning circuit 48 by verticalsignal lines 53 in column units. In other words, the plurality of pixels51 which are arranged in the same column within the pixel array unit 44are connected to the horizontal scanning circuit 48 by the same singlevertical signal line 53.

Each of the pixels 51 within the pixel array unit 44 outputs a pixelsignal corresponding to a charge accumulated in the inner portionthereof to the vertical signal line 53 according to the signal which issupplied from the vertical scanning circuit 43 via the horizontal signalline 52. The pixels 51 function as the pixels for imaging or the pixelsfor phase difference detection. The detailed configuration of the pixels51 will be described later with reference to FIG. 2 and the like.

The constant current source circuit unit 45 includes a plurality of loadMOSs 54, and one of the load MOSs 54 is connected to each of thevertical signal lines 53. In the load MOS 54, a bias voltage is appliedto the gate and a source is grounded. The load MOS 54 forms a sourcefollower circuit with the transistors within the pixels 51 which areconnected via the vertical signal line 53.

The reference signal generation unit 46 is configured to include aDigital to Analog Converter (DAC) 46 a, generates a ramp waveformreference signal and supplies the reference signal to the column ADconversion unit 47 according to the clock signal from the timing controlunit 42.

The column AD conversion unit 47 includes a plurality of Analog toDigital Converters (ADCs) 55, one of which is provided for every columnof the pixel array unit 44. Therefore, a plurality of the pixels 51, oneof the load MOSs 54, and one of the ADCs 55 are connected to one of thevertical signal lines 53.

The ADC 55 subjects the pixel signals which are supplied from the pixels51 of the same column via the vertical signal line 53 to a CorrelatedDouble Sampling (CDS) process, and further performs an AD conversionprocess thereon.

Each of the ADCs 55 temporarily stores the post-AD conversion pixel dataand outputs the data to the horizontal output line 49 according to thecontrol of the horizontal scanning circuit 48.

The horizontal scanning circuit 48 outputs the pixel data which isstored in the plurality of ADCs 55 to the horizontal output line 49, inorder at a predetermined timing.

The horizontal output line 49 is connected to the output circuit (theamplifier circuit) 50, and the post-AD conversion pixel data which isoutput from the ADCs 55 is output to the outside of a solid stateimaging device 41 from the output circuit 50 via the horizontal outputline 49. There is a case in which the output circuit 50 (the signalprocessing unit) only performs buffering, for example, and there is acase in which the output circuit 50 performs various digital signalprocessing such as black level adjustment and column variationcorrection.

The solid state imaging device 41 which is configured as described aboveis a CMOS image sensor referred to as a column AD type, in which the ADC55 which performs the CDS processing and the AD conversion processing isarranged for each vertical column.

(First Illustrative Configuration Example of Pixels)

FIG. 2 shows an illustrative equivalent circuit of the firstconfiguration example of the pixel 51.

The pixel 51 includes a photodiode 61 as a photoelectric conversionelement, a transfer transistor 62, a floating diffusion region (FD) 63,a reset transistor 64, an amplification transistor 65, and a selectiontransistor 66.

The photodiode 61 is a photoelectric conversion unit which generates andaccumulates a charge (a signal charge) corresponding to an amount ofreceived light. In the photodiode 61, the anode terminal is grounded andthe cathode terminal is connected to the FD 63 via the transfertransistor 62.

When the transfer transistor 62 is turned on by a transfer signal TX,the transfer transistor 62 reads the charge that is generated by thephotodiode 61 and transfers the charge to the FD 63.

The FD 63 holds the charge which is read from the photodiode 61. Whenthe reset transistor 64 is turned on by a reset signal RST, the resettransistor 64 resets the potential of the FD 63 by allowing the chargewhich is accumulated in the FD 63 to be discharged to the constantvoltage source VDD.

The amplification transistor 65 outputs a pixel signal corresponding tothe potential of the FD 63. In other words, the amplification transistor65 forms a source follower circuit with the load MOS 54 which is theconstant current source, and a pixel signal that indicates a levelcorresponding to the current which is accumulated in the FD 63 is outputfrom the amplification transistor 65 to the ADC 55 via the selectiontransistor 66.

The selection transistor 66 is turned on when the pixel 51 is selectedby a selection signal SEL, and the selection transistor 66 outputs thepixel signal of the pixel 51 to the ADC 55 via the vertical signal line53. The transfer signal TX, the reset signal RST, and the selectionsignal SEL are supplied from the vertical scanning circuit 43 via thehorizontal signal line 52 (FIG. 1).

(First Illustrative Structure Example of Pixel Array Unit)

FIGS. 3A and 3B are illustrative diagrams showing the first structureexample of the pixel array unit 44.

FIG. 3A is a schematic top surface diagram showing the first structureexample of the pixel array unit 44, and FIG. 3B is a cross sectionalview taken along the line A-A′ of FIG. 3A. Note that, in FIGS. 3A and3B, only a region of the photodiode 61 of 5×6 of the pixels 51 of thepixel array unit 44 is depicted. The same applies to FIGS. 4A, 4B, 7A to8B, 10A to 18B, and 20A to 26B, which are described later. In FIG. 3A,the on-chip lenses are not depicted. The same applies to FIGS. 4A, 4B,7A to 18B, and 20A to 27, which are described later.

As shown in FIG. 3A, each of the pixels 51 of the pixel array unit 44 isgenerally a pixel for imaging of a Bayer array, and a portion of thepixels for imaging have been replaced by pixels for phase differencedetection. Note that, hereinafter, when particularly distinguishing thepixels for phase difference detection of the pixels 51, the term phasedifference detection pixels 81 will be used.

The photodiode 61 of the phase difference detection pixel 81 isconfigured to include an optical black region 81 a and an opening region81 b which images white (W) light. The image data corresponding to thepixel signal which is obtained as a result of the imaging using theopening region 81 b is used in the detection of a phase difference in anexternal apparatus (not shown). The detected phase difference is used infocus determination or the like.

Hereinafter, when particularly distinguishing the pixel for imaging, ofthe pixels 51, which is adjacent to the side which opposes the side atwhich the optical black region 81 a of the phase difference detectionpixel 81 is arranged, that is, adjacent to the side at which the openingregion 81 b is arranged (the right side of the center in FIG. 3B), theterm first imaging pixel 82 will be used. When particularlydistinguishing the pixels for imaging other than the first imaging pixel82, of the pixels 51, the term second imaging pixel 83 will be used.

As shown in FIG. 3B, a transparent film 90 is formed on the photodiodes61 of the pixels 51. The material formed on the transparent film 90differs according to the type of the pixel 51.

Specifically, a light shielding film 91 a, and a light shielding film 91b, are respectively formed in regions corresponding to the entiresurface of the optical black region 81 a on the transparent film 90 ofthe phase difference detection pixel 81, and a portion within theopening region 81 b that forms a boundary with another pixel 51. Anon-chip lens 92 is formed to cover the transparent film 90 of the phasedifference detection pixel 81 on which the light shielding film 91 a andthe light shielding film 91 b are formed.

The on-chip lens 92 functions as a white color filter in addition tohaving a function of condensing the light from outside onto thephotodiode 61 of the phase difference detection pixel 81. Here, theon-chip lens 92 also functions as a white color filter; however, whitecolor filters other than the on-chip lens 92 may be provided.

A light shielding film 93 is formed on a portion on the transparent film90 of the first imaging pixel 82 that forms a boundary with anotherpixel 51. A color filter 94 which is red, green, or blue (red in FIG.3B) is further formed on the transparent film 90 of the first imagingpixel 82 on which the light shielding film 93 is formed. An on-chip lens95 is formed to cover the transparent film 90 of the first imaging pixel82 on which the light shielding film 93 and the color filter 94 areformed. The on-chip lens 95 condenses the light from outside onto thephotodiode 61 of the first imaging pixel 82.

A light shielding film 96 is formed on a portion on the transparent film90 of the second imaging pixel 83 that forms a boundary with anotherpixel 51. A color filter 97 which is red, green, or blue (red or greenin FIG. 3B) is further formed on the transparent film 90 of the secondimaging pixel 83 on which the light shielding film 96 is formed. Anon-chip lens 98 is formed to cover the transparent film 90 of the secondimaging pixel 83 on which the light shielding film 96 and the colorfilter 97 are formed. The on-chip lens 98 condenses the light fromoutside onto the photodiode 61 of the second imaging pixel 83.

In the solid state imaging device 41, the area of the color filter 94 issmaller than the area of the color filter 97. Specifically, a width L1in the horizontal direction of the color filter 94 of the first imagingpixel 82, which is the direction in which the phase difference detectionpixel 81 is adjacent to the first imaging pixel 82, is short incomparison to a width L1′ of the color filter 97 of the second imagingpixel 83. It is possible to set the difference between the width L1 andthe width L1′ to a value obtained by adding three times standarddeviation (sigma) to the mean value of the process variation of thecolor filters 94 or greater, for example (hereinafter referred to as thevariation value).

The process variation of the color filters 94 arises from thelithography process (the photo-lithography) of the color filters 94 (97)and depends on the apparatus that performs the lithography process, thewavelength of the light source used in the lithography process and thelike. For example, when an i-beam is used as the light source of thelithography process, the variation value is from several dozen nm toseveral hundred nm, approximately. In addition to the i-beam, KrF, ArFand the like may also be used as the light source of the lithographyprocess.

As shown in FIG. 3A, the position of the side (the right side in FIG.3B) of the color filter 94 of the first imaging pixel 82 which opposesthe side which is adjacent to the phase difference detection pixel 81 isthe same as that of the color filter 97 of the second imaging pixel 83which is lined up in the vertical direction (for example, the greensecond imaging pixel 83 below the red first imaging pixel 82 of FIG.3A).

As shown in FIG. 3B, the area of the light shielding film 93 is greaterthan the area of the light shielding film 96. Specifically, a width L2in the horizontal direction of the side within the light shielding film93 of the first imaging pixel 82 which is adjacent to the phasedifference detection pixel 81, is long in comparison to a width L2′ ofthe light shielding film 96 of the second imaging pixel 83. Thedifference between the width L2 and the width L2′ can be set to thevariation value or greater, for example.

In this manner, since the area of the light shielding film 93 is greaterthan the area of the light shielding film 96, the area of the colorfilter 94 is smaller than the area of the color filter 97; therefore, itis possible to prevent the light that does not pass through the colorfilter 94 from being incident to the photodiode 61 of the first imagingpixel 82.

As described above, the area of the color filter 94 is small incomparison to that of the color filter 97. Therefore, as shown in FIGS.4A and 4B, even when the red color filters 94 and 97 are shifteddiagonally to the lower left in FIG. 4A due to process variation, it ispossible to prevent the light that passes through the color filter 94from being incident to the opening region 81 b.

In other words, FIG. 4A is an illustrative schematic top surface diagramof the pixel array unit 44 of FIGS. 3A and 3B when the red color filters94 and 97 are shifted diagonally to the lower left due to the processvariation, and FIG. 4B is a cross sectional view taken along the lineA-A′ in FIG. 4A.

When the red color filter 97 is shifted diagonally to the lower left inFIG. 4A due to the process variation, as illustratively shown in FIG.4B, the red color filter 97 is also formed on a region in which thelight shielding film 96 of the adjacent green color filter 97 is notformed. Therefore, in addition to the light that passes through thegreen color filter 97, the light that passes through both the red colorfilter 97 and the green color filter 97 is incident to the photodiode 61of the green second imaging pixel 83.

However, since the area of the region of the second imaging pixel 83 onwhich the light shielding film 96 is not formed is large, there islittle influence of a decrease in sensitivity of the second imagingpixel 83 caused by light passing through both the red color filter 97and the green color filter 97. Since the amount of light which isincident via both the red color filter 97 and the green color filter 97is small, the influence of color mixing is also small.

Meanwhile, since the width L1 of the color filter 94 is small incomparison to the width L1′ of the color filter 97, even if the redcolor filter 94 moves diagonally to the lower left in FIG. 4A, the redcolor filter 94 is not formed on a region in which the light shieldingfilm 91 b is not formed. Therefore, since the light that passes throughthe on-chip lens 92 enters the opening region 81 b as it is withoutbeing blocked by the red color filter 94, a reduction in sensitivity issuppressed. The light that passes through the red color filter 94 is notincident on the opening region 81 b, and color mixing is suppressed.

Here, the area of the opening region 81 b is small in comparison to aregion of the second imaging pixel 83 in which the light shielding film96 is not formed. Therefore, when the area of the color filter of eachof the pixels 51 is simply reduced in size, the sensitivity of the phasedifference detection pixel 81 is reduced and the phase differencedetection precision deteriorates. Therefore, in the solid state imagingdevice 41, only the area of the color filter 94 of the first imagingpixel 82 is reduced in size. Accordingly, it is possible to suppress thecolor mixing in the phase difference detection pixel 81 without reducingthe sensitivity of the phase difference detection pixel 81.

The color filter of the phase difference detection pixel 81 is white.Therefore, when the light that passes through both the on-chip lens 92and the red color filter 94 reaches the photodiode 61, the amount of thelight that reaches the photodiode 61 is great and the influence of thecolor mixing is great in comparison to a case in which the light passesthrough both the red color filter 97 and the green color filter 97 andreaches the photodiode 61.

Therefore, the effect of suppressing the color mixing in the phasedifference detection pixels 81 is great.

As described above, since the area of the light shielding film 93 islarge in comparison to that of the light shielding film 96, thesensitivity of the first imaging pixel 82 is reduced in comparison tothat of the second imaging pixel 83. Therefore, the output circuit 50multiplies the pixel data which is obtained by the first imaging pixel82 with a gain (performs gain correction) such that, when the lightwhich is concentrated by the on-chip lens 95 and the on-chip lens 98 isthe same, the pixel data of the first imaging pixel 82 and the secondimaging pixel 83 is the same.

In a region on the transparent film 90 of the phase difference detectionpixel 81 in which the light shielding film is not formed, the light isreflected irregularly and a portion of the light is incident on thefirst imaging pixel 82. As a result, the color mixing occurs in thefirst imaging pixel 82. Therefore, the output circuit 50 subjects thepixel data of the first imaging pixel 82 to color mixing correction.

In FIGS. 4A and 4B, description was given of a case in which the redcolor filters 94 and 97 were shifted due to the process variation;however, in a case in which the green or the blue color filters 94 and97 are shifted, it is also possible to suppress the reduction insensitivity and the color mixing in the phase difference detectionpixels 81.

(Example of Shape of Light Shielding Film)

FIGS. 5A and 5B are schematic top surface diagrams showing examples ofthe shapes of the light shielding films 91 a, 91 b, 93, and 96 in thepixel array unit 44 of FIGS. 3A and 3B. FIGS. 5A and 5B represent thelight shielding film of the 5×1 pixels of the position of the A-A′ lineof FIG. 3A.

As illustratively shown in FIG. 5A, the light shielding films 91 a and91 b of the phase difference detection pixel 81 of the pixel array unit44 of FIGS. 3A and 3B are formed such that an opening portion 101 inwhich the light shielding film is not formed is rectangular. The lightshielding film 93 is formed such that an opening portion 102 in whichthe light shielding film is not formed is rectangular, and the lightshielding film 96 is formed such that an opening portion 103 in whichthe light shielding film is not formed is rectangular.

As illustratively shown in FIG. 5B, the light shielding films 91 a, 91b, 93, and 96 may be formed such that the opening portion 101 and theopening portion 102 have elliptical shapes, and the opening portion 103has a circular shape. Naturally, the shapes of the opening portions 101to 103 are not limited to the shapes of FIGS. 5A and 5B, and may betrapezoidal, triangular or the like.

(Illustrative Manufacturing Method of Pixel Array Unit)

FIGS. 6A to 6F are illustrative diagrams for showing the manufacturingmethod of the photodiodes 61 within the pixel array unit 44 of FIGS. 3Aand 3B.

As shown in FIG. 6A, first, the photodiode 61 with a waveguide (notshown) is formed on a semiconductor substrate. Next, as shown in FIG.6B, an inorganic film with a high transmittance such as a SiO₂ film, aSiN film, or a TIOx film is formed on the photodiodes 61 as thetransparent film 90. Note that, the transparent film 90 may be anorganic film. For example, the organic material of the color filters 94(97) and the on-chip lenses 92 (95, 98) may be siloxane or the like.

Next, as shown in FIG. 6C, the light shielding films 91 a, 91 b, 93, and96 are formed on the transparent film 90 using photo-lithography and dryetching.

As shown in FIG. 6D, the green color filters 94 and 97 are formed on thetransparent film 90 using photo-lithography and dry etching. Next, asshown in FIG. 6E, the red color filters 94 and 97 are formed on thetransparent film 90; and, subsequently, the blue color filters 94 and 97are formed on the transparent film 90 using photo-lithography and dryetching. Finally, as shown in FIG. 6F, the on-chip lenses 92, 95, and 98are formed to cover the transparent film 90 of the pixels 51.

As described above, in the solid state imaging device 41, the area ofthe color filter 94 of the first imaging pixel 82 is smaller than thearea of the color filter 97 of the second imaging pixel 83. Therefore,it is possible to suppress the color mixing and the sensitivityreduction in the pixels for phase difference detection when the colorfilters 94 are shifted due to the process variation of the color filters94.

Conversely, it is possible to suppress the color mixing by increasingthe width in the direction in which the light shielding film 91 b isadjacent to another pixel 51. However, in this case, since the openingportion 101 is narrowed, the sensitivity is reduced. Since the openingportion 101 of the phase difference detection pixel 81 is small incomparison to the first imaging pixel 82 or the second imaging pixel 83,the influence of the reduction in sensitivity is great, and there is acase in which it is difficult to detect the phase difference duringphotography in a dark place, for example.

In the description given above, the pixel 51 which is adjacent to theside of the phase difference detection pixel 81 at which the openingregion 81 b is arranged was set to the first imaging pixel 82; however,it is possible to set the pixel 51 which is adjacent to the phasedifference detection pixel 81 in the vertical direction to the firstimaging pixel 82.

In this case, the color filter 94 is arranged such that the position ofthe side of the color filter 94 of the first imaging pixel 82 which isnot adjacent to the phase difference detection pixel 81 is the same asthat of the second imaging pixel 83 which is lined up in the horizontaldirection. The width of the color filter 94 of the first imaging pixel82 in a direction in which the first imaging pixel 82 is adjacent to thephase difference detection pixel 81 is small in comparison to that ofthe color filter 97. Accordingly, it is possible to suppress thereduction in sensitivity and the color mixing of the phase differencedetection pixel 81 due to the process variation of the color filter 94of the first imaging pixel 82 which is adjacent to the phase differencedetection pixel 81 in the vertical direction.

Both the pixel 51 which is adjacent to the side of the phase differencedetection pixel 81 at which the opening region 81 b is arranged, and thepixel 51 which is adjacent to the phase difference detection pixel 81 inthe vertical direction can be set to the first imaging pixel 82.

(Second Illustrative Structure Example of Pixel Array Unit)

FIGS. 7A and 7B are illustrative diagrams showing the second structureexample of the pixel array unit 44.

Of the components shown in FIGS. 7A and 7B, components which are thesame as those in FIGS. 3A and 3B are given the same reference numerals.Redundant description will be omitted as appropriate.

The configuration of the pixel array unit 44 of FIGS. 7A and 7B differsfrom the configuration of FIGS. 3A and 3B in that a light shielding film111 is provided instead of the light shielding film 91 b. In the pixelarray unit 44 of FIGS. 7A and 7B, the color mixing in the first imagingpixel 82 is suppressed by providing the light shielding film 111, whichhas a greater area than the light shielding film 91 b.

Specifically, the light shielding film 111 is formed in a regioncorresponding to a portion within the opening region 81 b on thetransparent film 90 of the phase difference detection pixel 81 thatforms a boundary with another pixel 51. The area of the light shieldingfilm 111 is greater than that of the light shielding film 91 b. Thewidth in the horizontal direction of the light shielding film 111 islarge in comparison to the width in the horizontal direction of the sideof the light shielding film 96 which is adjacent to the phase differencedetection pixel 81.

The light shielding film 111 blocks the light which is reflectedirregularly in a region on the transparent film 90 of the phasedifference detection pixel 81 in which the light shielding film is notformed, and prevents the light from being incident on the photodiode 61of the first imaging pixel 82. As a result, it is possible to suppressthe color mixing in the first imaging pixel 82.

(Third Illustrative Structure Example of Pixel Array Unit)

FIG. 8 is an illustrative schematic top surface diagram showing thethird structure example of the pixel array unit 44.

Of the components shown in FIG. 8, components which are the same asthose in FIGS. 3A and 3B are given the same reference numerals.Redundant description will be omitted as appropriate.

The configuration of the pixel array unit 44 of FIG. 8 differs from theconfiguration of FIGS. 3A and 3B in that an optical black region 111 a,an opening region 111 b, a color filter 112, and a light shielding film112 a are provided instead of the optical black region 81 a, the openingregion 81 b, the color filter 94, and the light shielding film 93,respectively. In the pixel array unit 44 of FIG. 8, the opening region111 b has a square shape when viewed from above, and the pixels 51 whichare adjacent to the phase difference detection pixel 81 in thehorizontal direction and the vertical direction become the first imagingpixels 82.

Specifically, the opening region 111 b is one region that is obtained bydividing the region of the photodiode 61 of the phase differencedetection pixel 81 into four, and the optical black region 111 a is theremaining three regions.

The position in the vertical direction of the color filter 112 of thefirst imaging pixel 82, which is adjacent to the phase differencedetection pixel 81 in the horizontal direction, differs from that of theopening region 111 b of the phase difference detection pixel 81. Inother words, when the opening region 111 b is a region of the top leftor the top right of the photodiode 61, the color filter 112 is arrangedon the bottom side of the photodiode 61 of the first imaging pixel 82.When the opening region 111 b is a region of the bottom left or thebottom right of the photodiode 61, the color filter 112 is arranged onthe top side of the photodiode 61 of the first imaging pixel 82.

The position in the horizontal direction of the color filter 112 of thefirst imaging pixel 82, which is adjacent to the phase differencedetection pixel 81 in the vertical direction, differs from that of theopening region 111 b of the phase difference detection pixel 81. Inother words, when the opening region 111 b is a region of the top rightor the bottom right of the photodiode 61, the color filter 112 isarranged on the left side of the photodiode 61 of the first imagingpixel 82. When the opening region 111 b is a region of the top left orthe bottom left of the photodiode 61, the color filter 112 is arrangedon the right side of the photodiode 61 of the first imaging pixel 82.

The width of the color filter 112 in a direction in which the colorfilter 112 is adjacent to the phase difference detection pixel 81 isshort in comparison to that of the color filter 94 of the second imagingpixel 83. The position of the side of the color filter 112 which opposesthe side which is adjacent to the phase difference detection pixel 81 isthe same as that of the color filter 94 of the second imaging pixel 83which is lined up in a direction perpendicular to the direction adjacentto the phase difference detection pixel 81.

Note that, in the example of FIG. 8, the positions in the verticaldirection of the opening regions 111 b that are lined up in the verticaldirection are the same, and the positions in the horizontal directionare different; however, as illustratively shown in FIG. 9, the positionsin the horizontal direction of the opening regions 111 b that are linedup in the vertical direction may be the same, and the positions in thevertical direction may differ. In this case, for example, as shown inFIG. 9, the positions in the vertical direction of the opening regions111 b that line up in the horizontal direction are the same, and thepositions in the horizontal direction are set to be different. Byadopting this configuration, it is possible to detect the phasedifference in the horizontal direction and the vertical direction usingthe pixel signals of the phase difference detection pixels 81.

(Fourth Illustrative Structure Example of Pixel Array Unit)

FIGS. 10A and 10B are illustrative diagrams showing the fourth structureexample of the pixel array unit 44.

Of the components shown in FIGS. 10A and 10B, components which are thesame as those in FIGS. 3A and 3B are given the same reference numerals.Redundant description will be omitted as appropriate.

The configuration of the pixel array unit 44 of FIGS. 10A and 10Bdiffers from the configuration of FIGS. 3A and 3B in that the phasedifference detection pixel 81 is provided with a color filter 121. Inthe pixel array unit 44 of FIGS. 10A and 10B, the phase differencedetection pixel 81 is used as a pixel for imaging in addition to beingused as a pixel for phase difference detection.

Specifically, the color filter 121 is formed on the transparent film 90corresponding to the opening region 81 b in which the light shieldingfilm 91 a and the light shielding film 91 b are formed. In the exampleof FIGS. 10A and 10B, the color filter 121 is green (G). Accordingly,the pixel data of the phase difference detection pixel 81 can be used asthe pixel data of the green pixel for imaging in addition to being usedfor the phase difference detection.

Note that, since the opening portion 101 is small in comparison to theopening portion 102 or the opening portion 103, the sensitivity of thephase difference detection pixel 81 is low in comparison to the firstimaging pixel 82 or the second imaging pixel 83. Therefore, when thepixel data which is obtained by the phase difference detection pixel 81is used as it is as the pixel data of the green pixel for imaging, thereis a case in which the pixel data may not be obtained precisely duringphotography in a dark place. Accordingly, the output circuit 50 maymultiply the pixel data which is obtained by the phase differencedetection pixel 81 with a gain (perform gain correction) such that, whenthe light which is concentrated by the on-chip lens 92 and the on-chiplens 98 is the same, the pixel data of the phase difference detectionpixel 81 and the second imaging pixel 83 is the same.

In FIGS. 10A and 10B, the color filter 121 is green; however, the colorfilter 121 may be red or blue.

(Fifth Illustrative Structure Example of Pixel Array Unit)

FIGS. 11A and 11B are illustrative diagrams showing the fifth structureexample of the pixel array unit 44.

Of the components shown in FIGS. 11A and 11B, components which are thesame as those in FIGS. 3A and 3B are given the same reference numerals.Redundant description will be omitted as appropriate.

The configuration of the pixel array unit 44 of FIGS. 11A and 11Bdiffers from the configuration of FIGS. 3A and 3B in that an insulatingfilm 141 and a light shielding film 142 are provided below the lightshielding film 96 (91 a, 91 b, and 93).

The insulating film 141 is provided to cover the light shielding film142. The light shielding film 142 is provided below the light shieldingfilm 96 (91 a, 91 b, and 93) of the boundary of the pixels 51 topenetrate the transparent film 90 and the photodiode 61. Therefore, thelight shielding film 142 and the light shielding film 96 (91 a, 91 b,and 93) are connected to one another via the insulating film 141.

As illustratively shown in FIGS. 12A and 12B, the light shielding film142 may be provided to penetrate only the photodiode 61, and the lightshielding film 142 and the light shielding film 96 (91 a, 91 b, and 93)may be divided. The light shielding film 142 may not be provided.

(Sixth Illustrative Structure Example of Pixel Array Unit)

FIGS. 13A and 13B are illustrative diagrams showing the sixth structureexample of the pixel array unit 44.

Of the components shown in FIGS. 13A and 13B, components which are thesame as those in FIGS. 3A and 3B are given the same reference numerals.Redundant description will be omitted as appropriate.

The configuration of the pixel array unit 44 of FIGS. 13A and 13Bdiffers from the configuration of FIGS. 3A and 3B in that a lightshielding film 161 or 162 is provided below the light shielding film 96(91 a, 91 b, and 93).

The light shielding film 161 is provided on the boundary between thesecond imaging pixels 83, and on the boundary between the second imagingpixel 83 and the phase difference detection pixel 81 to penetrate thetransparent film 90 and the photodiode 61. Meanwhile, the lightshielding film 162 is provided on the boundary between the phasedifference detection pixel 81 and the first imaging pixel 82 topenetrate the transparent film 90 and the photodiode 61.

A width L12 in the horizontal direction of the light shielding film 162is large in comparison to a width L11 in the horizontal direction of thelight shielding film 161. Specifically, in the example of FIGS. 13A and13B, the width in the horizontal direction of the light shielding film162 below the light shielding film 91 b is the same as the width in thehorizontal direction of the light shielding film 161 below the lightshielding film 96 (91 a and 93); however, the width in the horizontaldirection of the light shielding film 162 below the light shielding film93 is greater than the width in the horizontal direction of the lightshielding film 161 below the light shielding film 96 (91 a and 93).

As shown illustratively in FIGS. 14A and 14B, the width in thehorizontal direction of the light shielding film 162 below the lightshielding film 93 is the same as the width in the horizontal directionof the light shielding film 161 below the light shielding film 96 (91 aand 93); however, the width in the horizontal direction of the lightshielding film 162 below the light shielding film 91 b is greater thanthe width in the horizontal direction of the light shielding film 161below the light shielding film 96 (91 a and 93); thus, the width L12 inthe horizontal direction of the light shielding film 162 may be greaterthan the width L11 in the horizontal direction of the light shieldingfilm 161. The light shielding film 161 (162) may be covered by aninsulating film.

In the description given above, a case in which the array of the pixels51 of the pixel array unit 44 is a Bayer array; however, the array ofthe pixels 51 of the pixel array unit 44 is not limited to the Bayerarray. For example, the array of the pixels 51 of the pixel array unit44 may be an array in which the same color is allocated to every 2×2pixels 51 (hereinafter referred to as a 2×2 pixel array).

(Seventh Illustrative Structure Example of Pixel Array Unit)

FIGS. 15A and 15B are illustrative diagrams showing the first structureexample of the pixel array unit 44 when the array of the pixels 51 is a2×2 pixel array.

Of the components shown in FIGS. 15A and 15B, components which are thesame as those in FIGS. 3A, 3B, 11A and 11B are given the same referencenumerals. Redundant description will be omitted as appropriate.

As shown in FIG. 15A, when the array of the pixels 51 is a 2×2 pixelarray, for example, one of the pixels 51 of the 2×2 green pixels 51 isreplaced with a phase difference detection pixel 181 which is used forboth phase difference detection and imaging. The green pixel which isadjacent to the phase difference detection pixel 181 is set to the firstimaging pixel 182. In the example of FIGS. 15A and 15B, of the greenpixels 51, the pixels 51 other than the phase difference detection pixel181 and the first imaging pixel 182, and the red and the blue pixels 51are set to second imaging pixels 183.

The configurations of the phase difference detection pixel 181, thefirst imaging pixel 182, and the second imaging pixel 183 are the sameas the respective configurations of the phase difference detection pixel81, the first imaging pixel 82, and the second imaging pixel 83 of FIGS.11A and 11B except in that a color filter 191 is shared between theadjacent pixels 51 of the same color, and except in that the insulatingfilm 141, the light shielding film 142, and the light shielding film 96are not provided at the boundaries of the second imaging pixels 183.

Therefore, the area of the light shielding film 93 of the first imagingpixel 182 is greater than the area of the light shielding film 96 of thesecond imaging pixel 183. Accordingly, it is possible to suppress thecolor mixing between the phase difference detection pixel 181 and thefirst imaging pixel 182, and to improve the signal-to-noise ratio. As aresult, it is possible to suppress a reduction in the sensitivity of thesolid state imaging device.

Since the light shielding film 142 is provided at the boundary betweenthe phase difference detection pixel 181 and the first imaging pixel182, the light which corresponds to the first imaging pixel 182 isreceived in the phase difference detection pixel 181, and it is possibleto suppress the occurrence of the color mixing.

In the example of FIGS. 15A and 15B, the phase difference detectionpixel 181 was used for both the phase difference detection and theimaging; however, as shown illustratively in FIGS. 16A and 16B, thephase difference detection pixel 181 may be used in only the phasedifference detection. In this case, the phase difference detection pixel181 is not provided with the color filter 191. In other words, the phasedifference detection pixel 181 images white light.

In the example of FIGS. 16A and 16B, the green pixels 51 were set to thephase difference detection pixels 181; however, as shown illustrativelyin FIGS. 17A and 17B, the red pixels 51 may be set to the phasedifference detection pixels 181. In this case, the red pixel 51 which isadjacent to the phase difference detection pixel 181 is set to the firstimaging pixel 182. Similarly, in the example of FIGS. 15A and 15B, thered pixels 51 may be set to the phase difference detection pixels 181.

As shown illustratively in FIGS. 18A and 18B, two of the pixels 51 whichare lined up in the vertical direction of the 2×2 green pixels 51 may bereplaced with the phase difference detection pixel 181 which is used forboth phase difference detection and imaging. In this case, the remainingtwo green pixels 51 are set to the first imaging pixels 182.

(Example of Illustrative Electrical Wiring Between Pixels)

FIGS. 19A to 19E are illustrative diagrams showing an example of theelectrical wiring between the pixels 51 when the array of the pixels 51is a 2×2 pixel array.

In FIGS. 19A to 19E, description is given of the green pixels 51;however, the same applies to the red and the blue pixels 51.

As shown in FIG. 19A, when the 2×2 green pixels 51 are the secondimaging pixels 183, the second imaging pixels 183 are connected to oneanother electrical wiring 201.

Meanwhile, when the structure of the pixel array unit 44 is thestructure of FIGS. 15A to 16B, as shown in FIGS. 19B and 19C, the firstimaging pixel 182 and the second imaging pixels 183 are connected to oneanother by electrical wiring 202; however, the phase differencedetection pixel 181 is independently provided with electrical wiring203.

In a case in which the structure of the pixel array unit 44 is thestructure of FIGS. 18A and 18B, or a case in which the phase differencedetection pixel 181 is used only for phase difference detection in FIGS.18A and 18B, as shown in FIGS. 19D and 19E, the first imaging pixels 182and the phase difference detection pixels 181 are connected to oneanother by the electrical wirings 204 and 205, respectively.

As described above, the electrical wiring is divided between the phasedifference detection pixel 181 and components other than the phasedifference detection pixel 181.

In the examples of FIGS. 15A to 18B, an on-chip lens was provided foreach of the pixels 51; however, the on-chip lenses may be shared betweenthe adjacent pixels 51 of the same color.

In this case, in the same manner as the case of FIGS. 15A and 15B, whenone of the pixels 51 of the 2×2 green pixels 51 is replaced with thephase difference detection pixel 181 which is used for both phasedifference detection and imaging, as illustratively shown in FIGS. 20Aand 20B, an on-chip lens 211 is shared by the 2×2 pixels 51 of the samecolor.

In the same manner as the case of FIGS. 16A and 16B, when the phasedifference detection pixel 181 is used only for phase differencedetection, for example, as shown illustratively in FIGS. 21A and 21B,the on-chip lens 211 is shared by the 2×2 pixels 51 of the same color orwhite.

In the same manner as the case of FIGS. 17A and 17B, when the red pixel51 is set to the phase difference detection pixel 181, for example, asshown illustratively in FIGS. 22A and 22B, the on-chip lens 211 isshared by the 2×2 pixels 51 of the same color. An on-chip lens 212 isshared by three of the red pixels 51 of the 2×2 red or white pixels 51.The phase difference detection pixel 181 includes the on-chip lens 92individually.

In this case, in the same manner as the case of FIGS. 18A and 18B, whentwo of the pixels 51 which are lined up in the vertical direction of the2×2 green pixels 51 are replaced with the phase difference detectionpixels 181 which are used for both phase difference detection andimaging, for example, as shown illustratively in FIGS. 23A and 23B, anon-chip lens 213 is shared by two of the pixels 51 which are adjacent inthe horizontal direction of the 2×2 pixels 51 of the same color.

When two of the pixels 51 which are lined up in the vertical directionof the 2×2 green pixels 51 are replaced with the phase differencedetection pixels 181 which are used only for phase difference detection,for example, as shown illustratively in FIGS. 24A and 24B, the on-chiplens 213 is shared by two of the second imaging pixels 183 which areadjacent in the horizontal direction of the 2×2 second imaging pixels183 of the same color. The 2×2 green pixels 51 formed of two of thephase difference detection pixels 181 and two of the first imagingpixels 182 include the on-chip lens 92 (95) individually.

In this case, as shown illustratively in FIGS. 25A and 25B, for example,the on-chip lens 213 may be shared by two of the pixels 51 which areadjacent in the horizontal direction of the 2×2 pixels 51 of the samecolor or white. The sharing of the on-chip lenses described above areexamples, and the combination of the pixels 51 which share the on-chiplenses are not limited to the examples described above.

As shown illustratively in FIGS. 26A and 26B, the array of the pixels 51of the pixel array unit 44 may be an array in which the green, the red,the blue, and the white are arranged in a checkered pattern. In thiscase, the phase difference detection pixel 81 is used for both phasedifference detection and imaging. Note that, the light shielding film142 of FIGS. 15A to 18, 26A and 26B may not be provided.

The array of the pixels 51 of the pixel array unit 44, as shownillustratively in FIG. 27, may be a ClearVid array in which the arraydirection is rotated by 45 degrees in relation to the normal arraydirection. In this case, since the pixels 51 on all four sides of thephase difference detection pixel 181 are the same color, the colormixing in the phase difference detection pixel 181 is extremely little.

(Second Illustrative Configuration Example of Pixels)

FIG. 28 illustratively shows an equivalent circuit of the secondconfiguration of the pixel 51.

The pixel 51 of FIG. 28 is a pixel which realizes an electronic globalshutter function. In FIG. 28, parts corresponding to those in FIG. 2 aregiven the same reference numerals, and description thereof will beomitted as appropriate.

When the pixel 51 of the second configuration is compared to the pixel51 of the first configuration described above, one more transfertransistor 231 which transfers a charge, and a memory unit (MEM) 232which temporarily holds a charge before transferring the charge to theFD 63 are further provided between the transfer transistor 62 and the FD63. Hereinafter, the transfer transistor 62 will be referred to as thefirst transfer transistor 62, and the transfer transistor 231 will bereferred to as the second transfer transistor 231.

In the pixel 51 of the second configuration, a discharge transistor 233for discharging an unnecessary charge is newly connected to thephotodiode 61.

Basic description will be given of the operations of the pixel 51 ofFIG. 28.

First, before starting an exposure, the discharge transistor 233 isturned on by a high level discharge signal OFG being supplied to thedischarge transistor 233, the charge which is accumulated in thephotodiode 61 is discharged to the constant voltage source VDD, and thephotodiode 61 is reset.

After the photodiode 61 is reset, when the discharge transistor 233 isturned off by a low level discharge signal OFG, exposure starts in allthe pixels.

When a predetermined exposure time has passed, the first transfertransistor 62 is turned on by a first transfer signal TX1 in all thepixels of the pixel array unit 44, and the charge which is accumulatedin the photodiode 61 is transferred to the memory unit 232.

After the first transfer transistor 62 is turned off, the charges whichare held by the memory unit 232 of the pixels 51 are read to the ADC 55in order in row units. The read operation is the same as in the firstconfiguration described above, the second transfer transistor 231 of thepixel 51 of the row being read is turned on by a second transfer signalTX2, and the charge being held in the memory unit 232 is transferred tothe FD 63. A signal which indicates a level corresponding to the chargewhich is accumulated in the FD 63 is output from the amplificationtransistor 65 to the ADC 55 via the selection transistor 66 by theselection transistor 66 being turned on by the selection signal SEL.

(Illustrative Arrangement Example of Components of Solid State ImagingDevice)

FIGS. 29A to 29C are illustrative diagrams showing arrangement examplesof the components of the solid state imaging device 41.

The pixel array unit 44, a control circuit 251, and a logic circuit 252of the solid state imaging device 41 are provided on a semiconductorsubstrate in one of the first to the third arrangements shown in FIGS.29A to 29C, for example. The control circuit 251 is a circuit formed ofthe timing control unit 42, the vertical scanning circuit 43, theconstant current source circuit unit 45, the reference signal generationunit 46, the column AD conversion unit 47, and the horizontal scanningcircuit 48, for example. The logic circuit 252 is a circuit formed ofthe output circuit 50, for example.

As shown in FIG. 29A, in the first arrangement, the pixel array unit 44,the control circuit 251, and the logic circuit 252 are all arranged on asame semiconductor substrate 261.

As shown in FIG. 29B, in the second arrangement, the pixel array unit 44and the control circuit 251 are arranged on one of a semiconductorsubstrate 262 and a semiconductor substrate 263, the two of which arelaminated together, and the logic circuit 252 is arranged on the other.In the example of FIG. 29B, the pixel array unit 44 and the controlcircuit 251 are arranged on the semiconductor substrate 262, and thelogic circuit 252 is arranged on the semiconductor substrate 263.

As shown in FIG. 29C, in the third arrangement, the pixel array unit 44is arranged on one of a semiconductor substrate 264 and a semiconductorsubstrate 265, the two of which are laminated together, and the controlcircuit 251 and the logic circuit 252 are arranged on the other. In theexample of FIG. 29C, the pixel array unit 44 is arranged on thesemiconductor substrate 264, and the control circuit 251 and the logiccircuit 252 are arranged on the semiconductor substrate 265.

Note that, in the above description, the number of layers ofsemiconductor substrates of the solid state imaging device 41 was one ortwo; however, the number may be two or more.

In the solid state imaging device 41, the sizes of the light shieldingfilms 91 a and 91 b (111) of the phase difference detection pixel 81 maychange in stages as the position within the pixel array unit 44 of thephase difference detection pixel 81 goes from the center toward theperiphery. In other words, the sizes of the light shielding films 91 aand 91 b (111) may be caused to change in stages with the image height.The size of the on-chip lens 92 which functions as a white color filtermay also be caused to change in stages with the image height, in thesame manner.

In this manner, it is possible to further improve the color mixingproperties and the color shading properties by causing the sizes of thelight shielding films 91 a, 91 b (111), and the on-chip lens 92 tochange in stages with the image height to perform pupil correction.

Note that, the sizes of the light shielding film 93 of the first imagingpixel 82, the light shielding film 96 of the second imaging pixel 83,the color filter 94, and the color filter 97 may also be caused tochange in stages with the image height, in the same manner.

Configuration Example of Illustrative Second Embodiment

(Configuration Example of an Illustrative Embodiment of ElectronicEquipment)

FIG. 30 is an illustrative block diagram that shows a configurationexample of an imaging apparatus as the electronic equipment to which thepresent disclosure is applied.

An imaging apparatus 900 of FIG. 30 is a video camera, a digital stillcamera or the like. The imaging apparatus 900 is formed of a lens group901, a solid state imaging device 902, a DSP circuit 903, a frame memory904, a display unit 905, a recording unit 906, an operation unit 907,and a power supply unit 908. The DSP circuit 903, the frame memory 904,the display unit 905, the recording unit 906, the operation unit 907,and the power supply unit 908 are connected to one another via a busline 909.

The lens group 901 captures incident light (image light) from an objectand forms an image on an imaging surface of the solid state imagingdevice 902. The solid state imaging device 902 is formed of the solidstate imaging device 41 described above. The solid state imaging device902 converts the amount of incident light forming an image on theimaging surface due to the lens group 901 into an electrical signal inpixel units and supplies the electrical signal to the DSP circuit 903 asa pixel signal.

The DSP circuit 903 performs predetermined image processing on the pixelsignal which is supplied from the solid state imaging device 902,supplies the post-image processing image signal to the frame memory 904in frame units, and causes the frame memory 904 to temporarily store theimage signal.

The display unit 905 is formed of a panel-type display apparatus such asa liquid crystal panel or an organic Electro Luminescence (EL) panel,for example, and displays an image based on the pixel signal of frameunits which is temporarily stored in the frame memory 904.

The recording unit 906 is formed of a Digital Versatile Disc (DVD),flash memory or the like, reads the pixel signal of frame units which istemporarily stored in the frame memory 904 and records the pixel signal.

The operation unit 907 gives operation commands relating to the variousfunctions implemented by the imaging apparatus 900 on the basis ofoperation by the user. The power supply unit 908 supplies power to theDSP circuit 903, the frame memory 904, the display unit 905, therecording unit 906, and the operation unit 907, as appropriate.

The electronic equipment to which the present technology is applied maybe electronic equipment which uses a solid state imaging device for animage capturing unit (a photoelectric conversion unit), and in additionto the imaging apparatus 900, there are a portable terminal apparatuswith an imaging function, a copier which uses a solid state imagingdevice for an image reading unit, and the like.

Note that the solid state imaging device 41 may be embodied by beingformed as one chip, and may also be embodied in module form with animaging function which is packaged to include an optical portion and thelike.

The present technology can be applied to a back-illuminated CMOS sensor,and to a front-illuminated CMOS sensor.

The present technology is particularly effective in high definitionsolid state imaging devices. In other words, in a high definition solidstate imaging device, the magnitude of the process variation of thecolor filters 94 is great in relation to the magnitude of the openingregions 81 b. For example, when the size of the pixel 51 is 1.0microns×1.0 microns, if the variation value is approximately fromseveral dozen nm to several hundred nm, the variation value accounts fora proportion of the size of the pixel 51 from several percent to severaldozen percent. Therefore, the influence of the color mixing and thereduction in sensitivity of the phase difference detection pixel 81 dueto the process variation of the color filters 94 is great, and theeffect of the present technology is great.

In the above description, the color filter 94, the color filter 97, andthe color filter 121 is one of red, green, or blue; however, the colorsthereof may be white, cyan, magenta or the like.

The effects disclosed in the present specification are merely examples,embodiments are not to be limited thereto and other effects may also bepresent.

The embodiments of the present disclosure are not limited to theembodiments described above, and various modifications may be madewithout departing from the gist of the present disclosure.

For example, instead of a photodiode, an organic photoelectricconversion film may be used as the photoelectric conversion element.Further, an organic photoelectric conversion film may be used instead ofthe color filter. The organic photoelectric conversion film is describedin detail in Japanese Unexamined Patent Application Publication No.2011-29337, which has already been applied for by the present applicant.

Note that, the present disclosure may adopt the followingconfigurations.

(A1) A solid state imaging device includes a phase difference detectionpixel which is a pixel for phase difference detection; a first imagingpixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a colorfilter of the first imaging pixel is smaller than an area of a colorfilter of the second imaging pixel.

(A2) In the solid state imaging device according to (A1), a position ofa side of the color filter of the first imaging pixel which opposes aside which is adjacent to the phase difference detection pixel is sameas that of the color filter of the second imaging pixel which is linedup in a direction perpendicular to a direction adjacent to the phasedifference detection pixel.

(A3) In the solid state imaging device according to (A2), a width of thecolor filter of the first imaging pixel in a direction in which thecolor filter is adjacent to the phase difference detection pixel isshort in comparison to that of the color filter of the second imagingpixel by a value or greater where the value is obtained by adding threetimes standard deviation to a mean value of process variation of thecolor filter.

(A4) In the solid state imaging device according to any one of (A1) to(A3), a light shielding film is formed on a portion of the first imagingpixel and the second imaging pixel, and an area of the light shieldingfilm of the first imaging pixel is greater than an area of the lightshielding film of the second imaging pixel.

(A5) In the solid state imaging device according to (A4), a width of aside of the light shielding film of the first imaging pixel which isadjacent to the phase difference detection pixel in a direction in whichthe light shielding film is adjacent to the phase difference detectionpixel is great in comparison to that of the light shielding film of thesecond imaging pixel.

(A6) In the solid state imaging device according to (A5), a width of aside of the light shielding film of the first imaging pixel which isadjacent to the phase difference pixel in a direction in which the lightshielding film is adjacent to the phase difference detection pixel islong in comparison to that of the light shielding film of the secondimaging pixel by a value or greater where the value is obtained byadding three times standard deviation to a mean value of processvariation of the color filter.

(A7) In the solid state imaging device according to any one of (A1) to(A6), an optical black region is arranged in the phase differencedetection pixel, and the first imaging pixel is adjacent to a sideopposing a side in which the optical black region is arranged.

(A8) The solid state imaging device according to (A7), a light shieldingfilm is formed on a portion of the second imaging pixel and the phasedifference detection pixel, and a width of a side of the light shieldingfilm of the phase difference detection pixel which is adjacent to thefirst imaging pixel in a direction in which the light shielding film isadjacent to the first imaging pixel is great in comparison to that ofthe light shielding film of the second imaging pixel.

(A9) The solid state imaging device according to any one of (A1) to (A8)further includes a signal processing unit which processes a pixel signalobtained in the first imaging pixel.

(A10) In the solid state imaging device according to (A9), the signalprocessing unit performs gain correction on the pixel signal.

(A11) In the solid state imaging device according to (A9) or (A10), thesignal processing unit corrects color mixing of the pixel signal.

(A12) A manufacturing method of a solid state imaging device includingforming a solid state imaging device which includes a phase differencedetection pixel which is a pixel for phase difference detection; a firstimaging pixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a colorfilter of the first imaging pixel is smaller than an area of a colorfilter of the second imaging pixel.

(A13) Electronic equipment includes a phase difference detection pixelwhich is a pixel for phase difference detection; a first imaging pixelwhich is a pixel for imaging and is adjacent to the phase differencedetection pixel; and a second imaging pixel which is a pixel for imagingother than the first imaging pixel. An area of a color filter of thefirst imaging pixel is smaller than an area of a color filter of thesecond imaging pixel.

(A14) A solid state imaging device includes a phase difference detectionpixel which is a pixel for phase difference detection; a first imagingpixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a lightshielding film of the first imaging pixel is greater than an area of alight shielding film of the second imaging pixel.

(A15) In the solid state imaging device according to (A14), aninsulating film is formed on a boundary between the first imaging pixeland another pixel, and on a boundary between the second imaging pixeland another pixel.

(A16) In the solid state imaging device according to (A14) or (A15), alight shielding film is formed on a boundary between the first imagingpixel and another pixel, and on a boundary between the second imagingpixel and another pixel.

(A17) In the solid state imaging device according to (A16), a width ofthe light shielding film provided on the boundary between the firstimaging pixel and the phase difference detection pixel is greater than awidth of the other light shielding film.

(A18) A manufacturing method of a solid state imaging device includingforming a solid state imaging device which includes a phase differencedetection pixel which is a pixel for phase difference detection; a firstimaging pixel which is a pixel for imaging and is adjacent to the phasedifference detection pixel; and a second imaging pixel which is a pixelfor imaging other than the first imaging pixel. An area of a lightshielding film of the first imaging pixel is greater than an area of alight shielding film of the second imaging pixel.

(A19) Electronic equipment includes a phase difference detection pixelwhich is a pixel for phase difference detection; a first imaging pixelwhich is a pixel for imaging and is adjacent to the phase differencedetection pixel; and a second imaging pixel which is a pixel for imagingother than the first imaging pixel. An area of a light shielding film ofthe first imaging pixel is greater than an area of a light shieldingfilm of the second imaging pixel.

(B1) A solid state imaging device, including: a phase differencedetection pixel; a first imaging pixel adjacent to the phase differencedetection pixel; a first color filter aligned with the first imagingpixel; a second imaging pixel; and a second color filter aligned withthe second imaging pixel; where an area of the first color filter issmaller than an area of the second color filter, and where an area of alight shielding film of the first imaging pixel is greater than an areaof a light shielding film of the second imaging pixel.

(B2) The solid state imaging device according to (B1), where a positionof a side of the first color filter that opposes a side that is adjacentto the phase difference detection pixel is a same position as a side ofthe second color filter that is lined up in a vertical direction.

(B3) The solid state imaging device according to (B1), further includingan insulating film and an additional light shielding film that areprovided below at least one of the light shielding film of the firstimaging pixel and the light shielding film of the second imaging pixel.

(B4) The solid state imaging device according to (B3), where theinsulating film and the additional light shielding film are provided topenetrate only a photodiode.

(B5) The solid state imaging device according to (B1), further includinga first additional light shielding film that is provided below the lightshielding film of the first imaging pixel and a second additional lightshielding film that is provided below the light shielding film of thesecond imaging pixel, the first and second additional light shieldingfilms having different widths.

(B6) The solid state imaging device according to (B5), where a width ofthe first additional light shielding film is greater than a width of thesecond additional light shielding film.

(B7) The solid state imaging device according to (B1), where the solidstate imaging device includes a pixel array unit of a 2×2 pixel arrays,and where the phase difference detection pixel and the first imagingpixel are of a same color.

(B8) The solid state imaging device according to (B1), where the solidstate imaging device includes a pixel array unit of 2×2 pixel arrays,where the phase difference detection pixel and the first imaging pixelare of a same color, and where the phase difference detection pixel isalso an imaging pixel.

(B9) The solid state imaging device according to (B8), further includingan insulating film and an additional light shielding film that areprovided below at least one of the light shielding film of the firstimaging pixel and the light shielding film of the second imaging pixel.

(B10) The solid state imaging device according to (B9), where lightcorresponding to the first imaging pixel is received in the phasedifference detection pixel.

(B11) The solid state imaging device according to (B1), where the solidstate imaging device includes a pixel array unit in which an arraydirection is rotated by 45 degrees in relation to a normal arraydirection.

(B12) The solid state imaging device according to (B1), furtherincluding a discharge transistor connected to a photodiode, where thedischarge transistor is controlled by an overflow gate.

(B13) The solid state imaging device according to (B1), where the solidstate imaging device includes a pixel array unit, a control circuit, anda logic circuit arranged on a same semiconductor substrate.

(B14) The solid state imaging device according to (B1), where the solidstate imaging device includes a pixel array unit, a control circuit, anda logic circuit; the pixel array unit and the control circuit beingarranged on a first semiconductor substrate; the logic circuit beingarranged on a second semiconductor substrate; and the firstsemiconductor substrate being laminated to the second semiconductorsubstrate.

(B15) The solid state imaging device according to (B1), where the solidstate imaging device includes a pixel array unit, a control circuit, anda logic circuit; the pixel array unit being arranged on a firstsemiconductor substrate; the logic circuit and the control circuit beingarranged on a second semiconductor substrate; and the firstsemiconductor substrate being laminated to the second semiconductorsubstrate.

(B16) The solid state imaging device according to (B1), where a width ofthe first color filter is different from a width of the second colorfilter in an amount equal to three times a standard deviation to a meanvalue of a process variation of the first and second color filters.

(B17) The solid state imaging device according to (B3), where one of theadditional light shielding films is connected by the insulating to thelight shielding film of the first imaging pixel.

(B18) The solid state imaging device according to (B8), where the phasedifference detection pixel and the first imaging pixel share a colorfilter.

(B19) A method of manufacturing a solid state imaging device, including:forming a phase difference detection pixel; forming a first imagingpixel adjacent to the phase difference detection pixel; and forming asecond imaging pixel; where an area of a color filter of the firstimaging pixel is smaller than an area of a color filter of the secondimaging pixel, and where an area of a light shielding film of the firstimaging pixel is greater than an area of a light shielding film of thesecond imaging pixel.

(B20) An electronic apparatus, including: a solid state imaging deviceincluding: a phase difference detection pixel; a first imaging pixeladjacent to the phase difference detection pixel; a first color filteraligned with the first imaging pixel; a second imaging pixel; and asecond color filter aligned with the second imaging pixel; where an areaof the first color filter is smaller than an area of the second colorfilter, and where an area of a light shielding film of the first imagingpixel is greater than an area of a light shielding film of the secondimaging pixel.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

REFERENCE SIGNS LIST

-   -   41 Solid state imaging device    -   50 Output circuit    -   81 Phase difference detection pixel    -   81 a Optical black region    -   82 First imaging pixel    -   83 Second imaging pixel    -   93 Light shielding film    -   94 Color filter    -   96 Light shielding film    -   97, 121 Color filter    -   141 Insulating film    -   142 Light shielding film

What is claimed is:
 1. A solid state imaging device, comprising: a phasedifference detection pixel; a first imaging pixel adjacent to the phasedifference detection pixel; a first color filter aligned with the firstimaging pixel and adjacent to a light incident side of the first imagingpixel; a second imaging pixel; a second color filter aligned with thesecond imaging pixel and adjacent to a light incident side of the secondimaging pixel; a light shielding film of the first imaging pixel,wherein the light shielding film of the first imaging pixel is adjacentto the light incident side of the first imaging pixel; a light shieldingfilm of the second imaging pixel, wherein the light shielding film ofthe second imaging pixel is adjacent to the light incident side of thesecond imaging pixel, wherein an area of the first color filter issmaller than an area of the second color filter, and wherein an area ofthe light shielding film of the first imaging pixel is greater than anarea of the light shielding film of the second imaging pixel; a firstadditional light shielding film, wherein the first additional lightshielding film is provided below the light shielding film of the firstimaging pixel and extends from a light incident surface of asemiconductor substrate having the phase difference detection pixel andthe imaging pixels; and a second additional light shielding film,wherein the second additional light shielding film is provided below thelight shielding film of the second imaging pixel and extends from thelight incident surface of the semiconductor substrate having the phasedifference detection pixel and the imaging pixels, wherein a width ofthe first and second additional light shielding films is a dimensionparallel to the light incident surface of the semiconductor substrate,and wherein the first and second additional light shielding films havedifferent widths.
 2. The solid state imaging device according to claim1, wherein a position of a side of the first color filter that opposes aside that is adjacent to the phase difference detection pixel is a sameposition as a side of the second color filter that is lined up in avertical direction.
 3. The solid state imaging device according to claim1, further comprising an insulating film provided below at least one ofthe light shielding film of the first imaging pixel and the lightshielding film of the second imaging pixel.
 4. The solid state imagingdevice according to claim 3, wherein the insulating film covers at leasta portion of the additional light shielding films.
 5. The solid stateimaging device according to claim 3, wherein one of the additional lightshielding films is connected by the insulating film to the lightshielding film of the first imaging pixel.
 6. The solid state imagingdevice according to claim 1, wherein a width of the first additionallight shielding film is greater than a width of the second additionallight shielding film.
 7. The solid state imaging device according toclaim 1, wherein the solid state imaging device includes a pixel arrayunit of a 2×2 pixel arrays, and wherein the phase difference detectionpixel and the first imaging pixel are of a same color.
 8. The solidstate imaging device according to claim 1, wherein the solid stateimaging device includes a pixel array unit of 2×2 pixel arrays, whereinthe phase difference detection pixel and the first imaging pixel are ofa same color, and wherein the phase difference detection pixel is alsoan imaging pixel.
 9. The solid state imaging device according to claim8, further comprising an insulating film and an additional lightshielding film that are provided below at least one of the lightshielding film of the first imaging pixel and the light shielding filmof the second imaging pixel.
 10. The solid state imaging deviceaccording to claim 9, wherein light corresponding to the first imagingpixel is received in the phase difference detection pixel.
 11. The solidstate imaging device according to claim 8, wherein the phase differencedetection pixel and the first imaging pixel share a color filter. 12.The solid state imaging device according to claim 1, wherein the phasedifference detection pixel has four sides, and wherein each of the foursides is adjacent imaging pixels of a same color.
 13. The solid stateimaging device according to claim 1, further comprising a dischargetransistor connected to a photodiode, wherein the discharge transistoris controlled by an overflow gate.
 14. The solid state imaging deviceaccording to claim 1, wherein the solid state imaging device includes apixel array unit, a control circuit, and a logic circuit arranged on asame semiconductor substrate.
 15. The solid state imaging deviceaccording to claim 1, wherein the solid state imaging device includes apixel array unit, a control circuit, and a logic circuit, wherein thesemiconductor substrate having the phase difference detection pixel andthe imaging pixels is a first semiconductor substrate, wherein the pixelarray unit and the control circuit are arranged on the firstsemiconductor substrate, wherein the logic circuit is arranged on asecond semiconductor substrate, and wherein the first semiconductorsubstrate is laminated to the second semiconductor substrate.
 16. Thesolid state imaging device according to claim 1, wherein the solid stateimaging device includes a pixel array unit, a control circuit, and alogic circuit, wherein the semiconductor substrate having the phasedifference detection pixel and the imaging pixels is a firstsemiconductor substrate, wherein the pixel array unit is arranged on thefirst semiconductor substrate, wherein the logic circuit and the controlcircuit are arranged on a second semiconductor substrate, and whereinthe first semiconductor substrate is laminated to the secondsemiconductor substrate.
 17. The solid state imaging device according toclaim 1, wherein a width of the first color filter is different from awidth of the second color filter in an amount equal to three times astandard deviation to a mean value of a process variation of the firstand second color filters.
 18. A method of manufacturing a solid stateimaging device, comprising: forming a phase difference detection pixel;forming a first imaging pixel adjacent to the phase difference detectionpixel; forming a first color filter aligned with the first imaging pixeland adjacent to a light incident side of the first imaging pixel;forming a second imaging pixel; forming a second color filter alignedwith the second imaging pixel and adjacent to a light incident side ofthe second imaging pixel; forming a light shielding film of the firstimaging pixel, wherein the light shielding film of the first imagingpixel is adjacent to the light incident side of the first imaging pixel;forming a light shielding film of the second imaging pixel, wherein thelight shielding film of the second imaging pixel is adjacent to thelight incident side of the second imaging pixel, wherein an area of acolor filter of the first imaging pixel is smaller than an area of acolor filter of the second imaging pixel, and wherein an area of a lightshielding film of the first imaging pixel is greater than an area of alight shielding film of the second imaging pixel; forming a firstadditional light shielding film, wherein the first additional lightshielding film is provided below the light shielding film of the firstimaging pixel and extends from a light incident surface of asemiconductor substrate having the phase difference detection pixel andthe imagine pixels; and forming a second additional light shieldingfilm, wherein the second additional light shielding film is providedbelow the light shielding film of the second imaging pixel and extendsfrom the light incident surface of the semiconductor substrate havingthe phase difference detection pixel and the imaging pixels, and whereinthe first and second additional light shielding films have differentwidths.
 19. An electronic apparatus, comprising: a solid state imagingdevice including: a phase difference detection pixel; a first imagingpixel adjacent to the phase difference detection pixel; a first colorfilter aligned with the first imaging pixel and adjacent to a lightincident side of the first imaging pixel; a second imaging pixel; and asecond color filter aligned with the second imaging pixel and adjacentto a light incident side of the second imagine pixel; a light shieldingfilm of the first imaging pixel, wherein the light shielding film of thefirst imaging pixel is adjacent to the light incident side of the firstimaging pixel; a light shielding film of the second imaging pixel,wherein the light shielding film of the second imaging pixel is adjacentto the light incident side of the second imaging pixel, wherein an areaof the first color filter is smaller than an area of the second colorfilter, and wherein an area of a light shielding film of the firstimaging pixel is greater than an area of a light shielding film of thesecond imaging pixel; a first additional light shielding film, whereinthe first additional light shielding film is provided below the lightshielding film of the first imaging pixel and extends from a lightincident surface of a semiconductor substrate having the phasedifference detection pixel and the imaging pixels; and a secondadditional light shielding film, wherein the second additional lightshielding film is provided below the light shielding film of the secondimaging pixel and extends from the light incident surface of thesemiconductor substrate having the phase difference detection pixel andthe imaging pixels, and wherein the first and second additional lightshielding films have different widths.